New generations of memristors could reliably store information directly within the molecular structures of graphene-like materials. In a new review published in Nanoenergy Advances, Gennady Panin of ...
The feature size of silicon-based transistors is approaching the theoretical limit, which puts forward higher requirements for the atomic level manufacturing of semiconductors. The basic idea of ...
The poster details recent accomplishments as part of his 2019 NSF CAREER Award-funded project, “Toward sub-60-mV/decade steep transistors using Dirac-source carrier injection and high-mobility 2D ...